时间：2018年5月25日14:30-15:30
地点：教十一318会议室
报告题目：Two-Dimensional Layered Materials for Nanoelectronics
报告人：Yang Chai
Department of Applied Physics, The Hong Kong Polytechnic University
E-mail: ychai@polyu.edu.hk
报告摘要： As the Moore’s law is coming close to its end, the development of future semiconductor research requires low power and high performance nanoelectronics (More Moore) and diverse and multifunctional devices (More than Moore). It has been becoming inevitable to introduce new materials into the existing Si platform to augment its functions. Two-dimensional (2D) layered semiconductors possess ultrathin body, atomic scale smoothness, dangling bond-free surface, reasonable good mobility, and sizable bandgap. Recently, we used graphene as the barrier of the Cu interconnect to replace conventional TaN barrier. Our experimental and computational results show that graphene barrier can meet the ITRS requirement. We also reveal distinct growth dynamics of semiconducting MoS2 flakes using in-situ transmission electron microscopy, and demonstrate a systematic study on group-10 transition metal dichalocogenides.
个人简介：Dr. Yang Chai received his PhD degree from the Hong Kong University of Science and Technology in 2009. After he conducted his Postdoctoral studies at Stanford University and University of Illinois at Urbana & Champaign, he joined the Department of Applied Physics in the Hong Kong Polytechnic University in 2012 as an Assistant Professor. He is a recipient of RGC Early Career Award in 2014, the IEEE Distinguished Lecturer since 2016, and the Semiconductor Science and Technology Early Career Research Award in 2017. His current research interest includes low-dimensional material for electron devices and energy devices.
