报告题目：III-V compound semiconductor nanowires on silicon: growth, novel structures, devices, and functional systems
报告时间： 2016年6月13日下午4点
报告地点：曹光彪大楼主楼326会议室
邀请人：皮孝东
报告摘要：We conducted a study on the growth, optical and electrical properties of III-V semiconductor nanowires. We show that a high-Q nanocavity can be created by placing a single III–V semiconductor nanowire in a grooved waveguide in a Si photonic crystal. For a CMOS-compatible process, we have developed Au-free growth technique for InP/InAs heterostructure nanowires with high controllability.
报告人简介：Dr. Guoqiang Zhang was born in Jiangsu, China. He received hisB.S. degree in electronic ceramic material science in 1997 and his M.S. degree in semiconductor physics and chemistry in 2000, both from Zhejiang University, Hangzhou, China. In 2004 he received his Ph. D degree in electronic material science from Shizuoka University, Japan. His doctoral thesis work is about epitaxial lateral overgrowth of InGaAs and InGaSb ternary film on patterned substrates. During the subsequent two years, he had been studying synthesis and characterization of ZnO nanowires and carbon nanotubes as a post-doctoral researcher. In 2006, He joined NTT Basic Research Laboratories, NTT Corporation, Japan, as a post doctor, and became a permanent staff in 2008. His current research interests are growth and characterization of nanowire-based nanostructures, design, fabrication and evaluation of novel electronic devices at the nanometer scale. He is a member of the Japan Society of Applied Physics, America Chemical Society.
