| 报告内容：Trends, Challenges and outlook for Ge/III-V CMOS Technologies and Applications 报告人：Cor Claeys 时间：3月19日上午10点 地点：硅材料国家重点实验室1号楼会议室（104室） 邀请人：杨德仁 摘要：The quest for higher performance of deep submicron CMOS devices has for more than a decade triggered research towards the use of high-mobility substrates to replaced silicon. Not only Ge-based technologies but also III-V semiconductors have been extensively studied and already showed their strong potential.This manuscript discusses the present status and challenges in relation to their future implementation in applications and systems.  主讲人介绍His main interests are semiconductor technology, device physics, low frequency noise phenomena, radiation effects and defect engineering and material characterization. He authored and co-authored 14 book chapters, over 1100 technical papers and is author or co-author of more than 900 presentations at international Conferences and Symposia. He is editor or co-editor of more than 50 Conference Proceedings. He has been project manager for a large number of European (SPECTRE, ACCES, STAR, NANOCMOS, PULLNANO, EUROSOI, SINANO, NANOSIL, SEANET, PRINS, NANOFUNCTION, etc.) research projects related to silicon technology and device physics. He also managed projects for the European Space Agency (ESA) related to the development of radiation detectors and radiation hardness of semiconductor devices. He is a Fellow of IEEE and also a Fellow of the Electrochemical Society. He was the recipient of the IEEE Third Millennium Medal and received in 2004 the Electronics Division Award. |
