时间：2014年9月26日（星期五）下午14:00-15:00
地点：硅材料国家重点实验室1号楼会议室（104室）
主讲人：刘明，中国科学院微电子研究所
邀请人：杨德仁
题目：The Developing Status and Challenge for Non-volatile Memory
Abstract:
As the semiconductor device continues scaling down, conventional Flash memory is facing more and more bottlenecks and will be very difficult to go through 16 nm node. According to the white paper of ITRS 2011, STT-MRAM and RRAM are thought as the most promising technologies among various emerging non-volatile memory concepts, and are worthy to put additional focuses on research and development to accelerate the progress toward commercialization. In this talk, semiconductor memory will be summarized, especially focus on flash memory. Then, a brief introduction on RRAM technology will be given and its opportunities & challenges will be discussed. Lastly, research works of RRAM in IMECAS will be introduced.
刘明，中国科学院微电子研究所 研究员，研究方向：纳米加工和新型存储器技术。
973首席科学家、国家杰出青年基金获得者和基金委创新群体负责人、入选“2013年国家百千万人才工程”。发表SCI收录论文150余篇, SCI引用超过2000次，3篇论文入选 High cited paper (Top 1%)。获得2013年国家发明二等奖（排名第一）、2007年国家发明二等奖（排名第二）和2012年真空科技成就奖等奖项。获得中国授权发明专利113项、美国授权发明专利2项。
