德国埃尔兰根纽伦堡大学教授Andreas Magerl学术报告
报告题目: Nucleation and growth of oxygen precipitates in Si observed in real time by novel X-ray technique
报告人：德国埃尔兰根纽伦堡大学Andreas Magerl 教授
地点：硅材料国家重点实验室会议室
时间:2011年10月19日上午10：00
报告摘要：Semiconductor silicon is still the basis material for integrated circuits. As the size of their transistors and features is still decreasing, an efficient and reliable defect characterization of the substrate material is essential. One of the main kinds of structural defects in Czochralski grown silicon are oxygen precipitates generated at high temperatures at about 1000 °C. Present methods for the characterization of these defects are based on infrared scattering, defect etchants, and transmission electron microscopy. None of these are suitable for in situ observations of precipitate growth. Professor Andreas Magerl will present a seminar about their activities in the field of oxygen precipitation in Cz-Si by high energy X-ray diffraction, where they have developed over the last years highly sensitive techniques to follow in real time during thermal treatments in particular the very early stages of precipitate formation。
Andreas Magerl教授简介：现任德国埃尔兰根纽伦堡大学凝固态物理学院材料学与结构物理系主任。主要从事中子和X射线衍射、晶体的结构以及衍射特性、动态衍射、薄膜结构等研究。Andreas Magerl教授自1990年以来共发表了70余篇论文，精通从理论和实验角度解释各种复杂晶体的结构，在晶体结构学方面做出了重要贡献。
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