日本神户大学Minoru FUJII教授学术报告通知
OPTICAL PROPERTIES OF DONOR AND/OR ACCEPTOR DOPED SILICON NANOCRYSTALS
Minoru FUJII
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University,
Rokkodai, Nada, Kobe 657-8501, Japan
URL: http://www2.kobe-u.ac.jp/~fujii1/
Nanometer-size silicon (Si) crystals such as Si nanowires and nanocrystals are believed to be new building blocks for future Si-based electronic and optoelectronic devices. In order to realize nano-Si based devices, precise control of shallow impurities and understanding of the physics are crucial. It has been demonstrated that optical properties of Si nanocrystals are strongly modified by doping very small number of impurities. This means that impurity doping can be regarded as a third parameter, following the size and the shape, to control the optical properties of Si nanocrystals. By properly utilizing impurity doping, the optical properties can be controlled in a wider range and the application filed of Si nanocrystals may be extended. In this presentation, we discuss linear and non-linear optical properties of Si nanocrystals in which phosphorous (P) and / or boron (B) are doped and discuss the effects of doping on these properties. We also show that impurity doping affects the stability of Si nanocrystals in polar liquid and we can realize Si nanocrystals dispersible in polar liquids without surface functionalization.
地点：原半导体厂内3号楼2层会议室
时间：10月18日（星期二）上午9点
联系人：皮孝东
电话：87953003
Nanometer-size silicon (Si) crystals such as Si nanowires and nanocrystals are believed to be new building blocks for future Si-based electronic and optoelectronic devices. In order to realize nano-Si based devices, precise control of shallow impurities and understanding of the physics are crucial. It has been demonstrated that optical properties of Si nanocrystals are strongly modified by doping very small number of impurities. This means that impurity doping can be regarded as a third parameter, following the size and the shape, to control the optical properties of Si nanocrystals. By properly utilizing impurity doping, the optical properties can be controlled in a wider range and the application filed of Si nanocrystals may be extended. In this presentation, we discuss linear and non-linear optical properties of Si nanocrystals in which phosphorous (P) and / or boron (B) are doped and discuss the effects of doping on these properties. We also show that impurity doping affects the stability of Si nanocrystals in polar liquid and we can realize Si nanocrystals dispersible in polar liquids without surface functionalization.
地点：原半导体厂内3号楼2层会议室
时间：10月18日（星期二）上午9点
联系人：皮孝东
电话：87953003
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