题目：Defect Engineering of crystalline silicon for integrated circuit and photovoltaic applications
报告人：Prof. George Rozgonyi，Department of Materials Science and Engineering, North Carolina State University
时间：2010年9月30日上午8:30
地点：永谦学生活动中心二楼学术报告厅
Rozgonyi 教授简介
Professor George Rozgonyi received his PhD degree from University of Arizona in 1963. After working at AT&T Bell for 19 years, he joined the North Carolina State University as a professor at department of Materials Science and Engineering. In 1981, he received Electrochemical Society Award “For advancing our fundamental understanding of defects in semiconductor device processing", and currently is a fellow of Electrochemical Society. Rozgonyi's interests include Defect engineering of silicon for integrated circuit (IC) and photovoltaic (PV) applications, impurity control via intrinsic and extrinsic gettering processes, point defect/extended defect dynamics, including mechanical properties/processes related to wafer breakage. In semiconductor field, he has published more than 400 papers and presented numerous invited lectures at international conferences.
Professor Rozgonyi has served as a chairman or one of advisory and executive committees at many international conferences. He is also the founding Director of two Industry/University Co-operative Research Centers. One is Silicon Wafer Engineering and Defect Science (SiWEDS) Center, which is established in 1997, dealing with the IC world. The other is Silicon Solar Consortium (SiSoC), serving for PV industry. His group is Now participating in the Solar America Initiative program of DOE as The Technology Partner with both BP Solar and GE Energy.
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