Chinese Version

The 2003 Zhu Kezhen Lectures

The Zhu Kezhen Annual Distinguished Lectureship was established in 1997 to bring to Zhejiang University a world leader of a scientific and technological field in which Zhejiang University already has strength to facilitate collaborations. The lecture events are to extend over several days during which the lecturer disseminates the latest advances, discusses the future trends as to where the field is going, and addresses the University community at large. The lectureship is named after Dr. Zhu Kezhen. Thus, the occasion is also an opportunity to remember and honor Dr. Zhu. 

Dates: 2003 November and December
Location: Hangzhou, Zhejiang Univerisity, PRC
Research Field: Semiconductor Science


2003 Zhu Kezhen Lecturers:
Professor Chenming Hu, University of California, Berkeley

Professor Eicke R. Weber, University of California at Berkeley 

Dr. Zhenan Bao, Distinguished Member of Technical Staff, Bell Labs, Lucent Technologies
★ Schedule ★

 
Topic
Time
Chengming Hu
The Brave Future of Nanoscale Semiconductor Technology 9:00,2003/10/31
Eicke R. Weber
Understanding Defects in Semiconducts:A Key to Advancing Device Technology 10:30,2003/12/19
Zhenan Bao
Organic materials for plastic electronics 9:00,2003/12/19

Organizer: The State Key Lab of Silicon Materials, Zhejiang University, PRC. 
           (Tel: (086)0571-87951667 Fax: (086)0571-87952322) 
Host Porfessor: Deren Yang (email: mseyang@dial.zju.edu.cn) 
Sponsor: The AMERICAN ZHU KEZHEN EDUCATION FOUNDATION 
Assisted Organizer: Zhejiang University International Programs Office
                                   (Yiwen Yang, email: ipo@sun.zju.edu.cn)

Biosketches of 2003 Zhu Kezhen Lecturers
Chancellor's Professor
Department of Electrical Engineering and Computer Sciences
University of California at Berkeley
hu@eecs.berkeley.edu
    Dr. Chenming Calvin Hu was born in Beijing, China in 1947 and is a naturalized citizen of USA.  He received his B.S. degree from Taiwan University and M.S. and Ph.D. degrees from the University of California, Berkeley, all in electrical engineering.     He is the Chief Technology Officer of TSMC, Hsinchu, Taiwan.  He is on leave from UC Berkeley, where he is TSMC Distinguished Professor of Electrical Engineering and Computer Sciences.  He was an assistant professor at MIT before joining UC Berkeley.  He was the board chairman of the East San Francisco Bay Chinese School and is a frequent advisor to industry and educational institutions.  He is a cofounder and cochairman of Celestry Design Technologies, Inc.
    His research area includes microelectronic devices and technologies.  He has authored or co-authored five books and over 700 research papers and supervised 60 doctoral students.  He and Dr. Ping Ko and their students have codeveloped the MOSFET model, BSIM, for CMOS circuit simulation.  BSIM has been chosen as the first industry standard for IC simulation by the Electronics Industry Alliance and is used at over 1000 companies for product design.  In 1997, Dr. Hu received the IEEE Jack A. Morton Award for contributions to the understanding of MOSFET reliability physics.  In 1999, he received the DARPA Most Significant Technological Accomplishment Award for co-developing FinFET, a promising MOSFET structure for scaling to 10nm gate length.
    Dr.Hu is a member of the US National Academy of Engineering, a fellow of the IEEE, a fellow of the Institute of Physics,  an Honorary Professor of the Chinese Academy of Science, Beijing, and of Chiao Tung University, Taiwan.  He has received UC Berkeley's highest honor for teaching -- the Distinguished Teaching Award.
He enjoys traveling and painting with his wife, Margaret, and their sons, Raymond and Jason.


Eicke R. Weber
Professor of Materials Science
Department of Materials Science and Engineering
University of California at Berkeley
weber@socrates.berkeley.edu

    Professor of Materials Science -Dept. of Materials Science and Engineering, University of California at BerkeleyMemebr of faculty advisory board -Integrated Materials Laboratory at UC Berkeley Director -UC Berkeley Partner Center of the Silicon Wafer Engineering and Defect Science (Si-WEDS) ConsortiumPresident -Alexander von Humboldt Association of America (AvHAA), http://www.lycoming.edu/humboldt/info.htm and http://www.avh.de/Principal Investigator -Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley National Laboratory 

EDUCATION
· B.S. University of Cologne, West-Germany 1970
· M.S. University of Cologne, West-Germany 1973
· Ph.D. University of Cologne, West-Germany 1976


Zhenan Bao
Distinguished Member of Technical Staff
Bell Labs, Lucent Technologies
zbao@lucent.com

    Dr. Zhenan Bao is a Distinguished Member of Technical Staff in Bell Laboratories of Lucent Technologies (Murray Hill, New Jersey). She attended undergraduate study at Nanjing University (1987-1990), China and the University of Illinois at Chicago (1990-1991). She received her Ph.D. degree in chemistry from the University of Chicago in 1995, where she investigated palladium-catalyzed reactions for the synthesis of functional conjugated polymers and their applications as electro-optical materials. She then joined Bell Laboratories as a member of technical staff. She has been a Distinguished Member of Technical Staff since 2001. Her current research interests include rational design and synthesis of organic and polymeric semiconductors, nonlithographical patterning, and self-assembled molecular structures and micro-objects. Dr. Zhenan Bao has authored more than 80 refereed publications, given more than 80 invited talks and lectures, and held ten issued US patents (20 pending). She served as symposium organizers for the American Chemical Society meeting (Spring 2000), the Material Research Society conferences (Fall 1999, Spring 2000, Fall 2001) and the European Material Research Society conference (1999, 2000). She was the program chair for the Material Research Society conference (spring 2002). She currently serves as a member of board of directors for the Materials Research Society and an Executive Committee Member for the Polymer Materials Science and Engineering division of the American Chemical Society. She is on the international advisory board for the journal of Advance Functional Materials and Materials Today. Dr. Zhenan Bao has been Guest Editors for MRS Bulletin, Synthetic Metals, and MRS symposium proceedings. Dr. Zhenan Bao is a recipient of the American Chemical Society Team Innovation Award 2001, R&D 100 Award, and R&D Magazine’s Editors Choice of the “Best of the Best” new technology for 2001. She has also been selected in 2002 by the American Chemical Society Women Chemists Committee as one of the twelve “Outstanding Young Woman Scientist who is expected to make a substantial impact in chemistry during this century”.
    Zhenan Bao was responsible for the discovery of a variety of new high performance organic semiconductors as the essential components for plastic transistors. These new transistors could be utilized in a flexible computer display consisting of a thin sheet of plastic, disposable sensors, and flexible electronic tags.
    Zhenan Bao designed and synthesized the first air-stable high performance n-channel organic semiconductor, which allowed her team to demonstrate the largest scale integration of organic plastic transistors (Nature 2000, vol 403, page 521). She was also responsible in synthesizing the best performing printable polymer semiconductor, which allowed her to fabricate the first all-printed plastic circuits (Science 1997 October 17, vol 278, page 383-384). In year 2001, her discovery of a class of high performance spin-on dielectric material as well as the compatible organic semiconductors played key roles in the demonstration of world’s first electronic paper (R&D 100 award 2001). In 2002, she reported the chemical design and synthesis of a new generation of organic semiconductors, which showed improved long-term stability with performance comparable to amorphous silicon. These new materials may have great potential in realizing commercial products with organic semiconductors.